Hugging Face's logo
Papers
arxiv:1802.01472

Coefficient of Thermal Expansion Balancing for Field Assisted Bonding of Silicon to Glass

Published on Jan 4, 2018
Authors:
,

Abstract

An analytical thin-film stress model using integrated thermal expansion differences determines optimal anodic bonding temperatures for silicon and glass to minimize residual stresses.

Generated by thinkingmachines/Inkling-Small

Stresses caused by thermal expansion coefficients mismatch of anodically bonded glass and silicon samples are studied. An analytical model to determine graphically the optimum bonding temperature is presented. It is essentially a model for thin-film stress but uses integration of the linear coefficient of thermal expansion difference between the bonding temperature and the working temperature. Recommendations for choosing the bonding temperature of silicon to two brands of glass (Corning 7740 and LK5) are made. Keywords: anodic bonding, field assisted bonding, thermal expansion, stress.

View arXiv page View PDF Add to collection

Community

Sign up or log in to comment

Models citing this paper 0

No model linking this paper

Cite arxiv.org/abs/1802.01472 in a model README.md to link it from this page.

Datasets citing this paper 0

No dataset linking this paper

Cite arxiv.org/abs/1802.01472 in a dataset README.md to link it from this page.

Spaces citing this paper 0

No Space linking this paper

Cite arxiv.org/abs/1802.01472 in a Space README.md to link it from this page.

Collections including this paper 0

No Collection including this paper

Add this paper to a collection to link it from this page.